Silicon disulfide Lewis Structure

Silicon disulfide Lewis Structure: S₂Si Lewis Structure, linear Geometry, sp Hybridization & Polarity

Silicon disulfide Key Facts

The Silicon disulfide Lewis structure is Si–S double bond and Si–S double bond; the central Si has 2 electron domains (0 lone pairs), giving a linear electron-domain arrangement and a linear molecular geometry with a 180° bond angle. Si is best described as sp-hybridized, and Silicon disulfide is nonpolar because the bond dipoles cancel by molecular symmetry.

Figure 1: Lewis Structure of Silicon disulfide (S₂Si)

Chemical Formula	S₂Si
CAS Number	13759-10-9
Total Valence Electrons	16
Lewis Structure	Si–S double bond and Si–S double bond
Electron-Domain Geometry	linear
Molecular Geometry	linear
Hybridization Model	sp (central Si)
Bond Angle	180°
Polarity	Nonpolar molecule

PubChem (CID 83705) and NIST list Silicon disulfide as S ₂Si with CAS 13759-10-9; molecular weight ≈ 92.22 g/mol. View CAS 13759-10-9 dictionary details on Guidechem →

Applications of Silicon disulfide (CAS 13759-10-9)

Silicon disulfide is encountered as a reagent, intermediate or specialty chemical in inorganic, organometallic and materials synthesis. Confirm grade, purity and supplier documentation (SDS) before specifying for a process.

Reagent / Intermediate Used in synthesis and formulation where the substance's reactivity is required.

Specialty Chemical Specified by grade for the intended process or research use.

Sourcing Verify purity, package and regional availability via the CAS identifier.

Procurement Note "Silicon disulfide" is supplied in multiple commercial grades and package sizes. Specify purity, grade, moisture/impurity limits, package (cylinder, drum or bulk) and intended process, and use CAS 13759-10-9 as the primary identifier when screening suppliers; always confirm regional availability and safety documentation (SDS).

Step 1 - Valence Electrons & Central Atom

To draw the Silicon disulfide Lewis structure we first count the total valence electrons. S₂Si contains 2×6 (S) + 4 (Si); the net charge of 0 gives a total of 16 valence electrons to place.

The central atom is Si. It is the least electronegative atom capable of forming multiple bonds and is surrounded by the more electronegative terminal atom(s); hydrogen, when present, always occupies a terminal position. Electronegativity considerations place the electron density toward the terminal atom(s).

Valence-electron count

Total valence electrons = 2×6 (S) + 4 (Si) = 16 electrons.

Step 2 - Lewis Structure & Electron Distribution

Place Si at the center and connect each surrounding atom with a single bond, complete octets on the terminal atoms, and place any remaining electrons on the central atom. The resulting electron distribution is: Si–S double bond and Si–S double bond; no lone pairs on Si.

Counting bonding and nonbonding electrons around Si therefore satisfies the octet/expanded-octet requirement for the drawn structure.

This species is best represented by resonance structures; the π bonding is delocalized over the equivalent terminal atom(s), so all Si–terminals bonds are equivalent in the resonance hybrid.

Si=S Si=S

Si: 0 lone pairs, 2 bonding domains

2 bonding domains + 0 lone pairs = 2 electron domains

Octet Rule: Why Si Has Eight Electrons Si forms 2 bond(s) and retains 0 nonbonding electron(s), reaching an octet. No expanded octet is required for this second-row (or octet-satisfying) central atom.

Step 3 - VSEPR Theory & Geometry

VSEPR theory states that the 2 electron domains around Si arrange to minimize mutual repulsion, giving an linear electron-domain geometry.

Because 0 of these domains are lone pair(s) — and lone pairs repel more strongly than bonding pairs — the observed molecular geometry is linear; the Si bond angle is set to 180° rather than the ideal value for the electron-domain geometry.

Repulsion hierarchy

A useful VSEPR approximation is: lone pair–lone pair repulsion > lone pair–bonding pair repulsion > bonding pair–bonding pair repulsion. With 0 lone pair(s) on Si, the lone-pair domains occupy positions that minimize overall repulsion while pushing the bonding domains (and therefore the bonded atoms) closer together.

Hybridization & Formal Charge

In the conventional localized-bond model, Si uses sp hybrid orbitals to form the 2 equivalent electron-domain directions (2 bonding + 0 lone pair).

Formal-charge check

Formal charge on central Si = V − N − ½B = 4 − 0 − ½×8 = 0. The preferred Lewis structure carries zero formal charge on the central atom (and on the terminals), so it is the dominant contributor.

Modeling Note Modeling Note: sp is a compact model for the 2 electron-domain directions around Si; full quantum-chemical treatments use molecular orbitals.

Is Silicon disulfide Polar or Nonpolar?

Silicon disulfide is nonpolar. Although individual Si–terminal bonds are polar when the atoms differ in electronegativity, the linear geometry makes their vector sum zero, so there is no net molecular dipole.

Expert Quote — Structural Chemistry Perspective

A common misconception is that polar bonds guarantee a polar molecule. Silicon disulfide shows the opposite: identical bond dipoles arranged with linear symmetry cancel exactly, yielding a nonpolar species.

Interpretation consistent with standard VSEPR / molecular-geometry references.

Its nonpolar character governs solvation and intermolecular behavior; specify grade and handling when sourcing.

Structural Comparison Table

Species	Formula	Central Atom	Electron Domains	Molecular Geometry	Polarity
Silicon disulfide	S₂Si	Si	2	linear	Nonpolar
Silicon tetrafluoride	F₄Si	Si	4	tetrahedral	Nonpolar
Silane	H₄Si	Si	4	tetrahedral	Nonpolar

Practice question Starting from the 16 valence electrons of S₂Si, draw the Lewis structure and confirm the central Si atom is sp-hybridized with linear geometry. What happens to the bond angle if one terminal atom is replaced by a more electronegative substituent?

Looking for industrial bulk or specified-grade supplies of Silicon disulfide (CAS 13759-10-9)? Browse Supplier on Guidechem →

FAQs

Is S₂Si polar or nonpolar?

Silicon disulfide is nonpolar. Its linear symmetry cancels the bond dipoles exactly.

What is the Lewis structure of Silicon disulfide?

Si–S double bond and Si–S double bond; no lone pairs on Si. It uses all 16 valence electrons and the preferred structure carries zero formal charge on the central atom.

What is the bond angle in Silicon disulfide?

The Si angle is about 180°. Lone-pair repulsion compresses the angle from the ideal linear value.

What is the hybridization of Si in Silicon disulfide?

The conventional model is sp. Silicon disulfide has 2 electron domains around the central Si.

What is the CAS number of Silicon disulfide?

The CAS number is 13759-10-9. PubChem (CID 83705) and NIST identify this with S₂Si; use it to locate suppliers and database records.

References

PubChem CID 83705, Silicon disulfide. Molecular formula, CAS number, molecular weight and chemical identity.
NIST Chemistry WebBook, SRD 69, Silicon disulfide. Formula, CAS Registry Number and thermochemical / spectroscopic data.
IUPAC Gold Book. Definitions for "lone pair", "VSEPR", "hybridization" and "formal charge".
Atkins, P. & de Paula, J., Physical Chemistry. VSEPR, molecular geometry and dipole moments.
Guidechem supplier & dictionary records. Commercial sourcing and CAS-linked property pages for Silicon disulfide (CAS 13759-10-9).

Technical scope: Lewis structures, VSEPR and hybridization are model-based descriptions for chemical communication and structure prediction; actual molecular electronic structure is more accurately represented by molecular-orbital and quantum-chemical methods. Commercial grades vary substantially by supplier and intended use; CAS 13759-10-9 identifies the substance, not a universal purity specification.

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Silicon disulfide Lewis Structure