窒化アルミニウム

Aluminum nitride (AIN) is an important III-V group semiconductor material, which has aroused great attention due to many outstanding features including high thermal conductivity (~320 Wm10^ -1 K^-1), high electrical resistance (>10^10 Ωcm), low dielectric constant (8.6), wide band gap (6.2eV), and low thermal expansion coefficient (4.2x 10-6°C)-1 match to both Si and GaN semiconductors. AIl these properties make AIN an excellent candidate for use in electronic, light, and field- emission devices.Aluminum nitride advantagesHigh heat dissipation with thermal conductivity of 170 W/m KNon-toxic alternative to BeOThermal expansion coefficient similar to Si, GaN, and GaAs semiconductorsHigh dielectric strength.
Crystalline solid.

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